PART |
Description |
Maker |
TISP5190H3BJ TISP5110H3BJ |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solut...
|
TISP6L7591 TISP6L7591DR-S TISP6L7591DR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] Power Innovations Limited
|
TISPPBL2P TISPPBL2D TISPPBL1P TISPPBL1D |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS 双远期导电的P -门晶闸管爱立信成分SLIC组件
|
Mospec Semiconductor, Corp. Power Innovations International, Inc. Power Innovations Limited POINN[Power Innovations Ltd]
|
TISPPBL3D TISPPBL3DR-S TISPPBL3DR TISPPBL3 TISPPBL |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC)
|
BOURNS[Bourns Electronic Solutions]
|
FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
IHW40N60R |
Reverse conducting IGBT
|
Infineon Technologies A...
|
H15R1203 |
Reverse conducting IGBT
|
Infineon Technologies
|
IHY20N120R3 IHY15N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
5SHX03D6004 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
IHD10N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|